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Home > chinese-english > "carrier effect" in English

English translation for "carrier effect"

载体效应

Related Translations:
carriers:  搬运车电信业者新进地方电话公司
carrier:  n.1.运送人,搬夫;负荷者;使役,〔美国〕信差,邮递员;送报人;〔英国〕运输行,运输业者。2.传书鸽,信鸽。3.(车后的)货架;吊架;托架。4.水管,引水沟。5.运载工具;搬运机;移动滑车。6.【医学】带菌者,病媒。7.航空母舰。8.【电学】载波;载流子;【拓】承载子;【化学】载体,填料;导染剂。短语和例子a mail [letter] carrier邮递员。 a ban
Example Sentences:
1.This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide , and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s
本文对超薄栅氧化层经时击穿( tddb )击穿机理和可靠性表征方法以及深亚微米mos器件热载流子效应( hce )进行了系统研究。
2.First , the scaling limitation and relative reliability problems are analyzed for mosfet in vlsi , especially for hot - carrier effects of small dimension mosfet . and a review of the study of hot - carrier effects on devices and circuits is presented
首先,本文对超大规模集成电路中mos器件尺寸缩小的限制及相应的可靠性问题进行了分析,特别是对小尺寸mosfet的热载流子效应进行了较详细的讨论;并对国内外mos器件和电路的热载流子可靠性研究进行了概述。
3.It is proposed that the higher dose condition creates more hot carriers but the lower sensitivity to hot carrier effect . therefore , the optimum dose for reliability is determined from the trade - off between the above two aspects . finally , a simple model is proposed and discussed
本文还深入研究了sde区掺杂浓度对器件热载流子可靠性的影响,指出浓度的提高虽然会产生更多的热载流子,但由于其对热载流子损伤的敏感度降低,因此将存在一种折衷,最后通过一个简单的寄生电阻模型,对掺杂浓度提高后,器件对热载流子损伤敏感度降低的现象做出了很好的解释。
4.Finally , according to the mosfet ' s parameter degradation due to hot - carrier effects and different application environment of mos devices on analog and digital circuits , the circuit structures for hot - carrier immunity are proposed for digital applications by adding a schottky diode in series with the drain of the nmosfet suffered heavily from hot - carrier degradation . ,
即在受热载流子退化效应较严重的n mosfet漏极串联一肖特基二极管的新型cmos数字电路结构和串联一工作于线性区的常开n mosfet的mos模拟电路结构。经spice及电路可靠性模拟软件bert2
5.In this paper , based on the physical mechanisms of hot - carrier degradation of small dimensional mosfet , the mosfet characteristics degradation induced by the hot - carrier effect are deeply studied analytically and experimentally , the method to predict the lifetime of devices and circuits is given and mos digital and analog circuit structures for the resistance of hot - carrier degradation are presented
本文基于小尺寸mos器件热载流子退化的物理机理,对器件热载流子退化所导致的性能退化进行了深入的理论分析和相应的实验研究,给出了预测mos器件和电路热载流子退化寿命的方法,并提出了抗热载流子退化的mos模拟和数字电路结构。
6.It is shown that substrate current is not the good indication of hot carrier effect in sde structures and using a threshold degradation criterion to characterize device degradation is not suitable for sde structures . third , the effect of the sde implant dose on the hot carrier immunity is thoroughly studied
在此基础上,指出采用峰值衬底电流评估sde结构器件可靠性的局限性,以及在采用i - v特性测试方法研究sde结构器件的热载流子效应时,阈值电压作为退化判据所存在的问题。
7.This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet . its advantages are as fellow : no latch - up effect , better capability of resisting invalidation , much smaller parasitic capacitance , weaker hot - carrier effect and short - channel effects , and simpler technics , and so on
通过与体硅bjmosfet比较,讨论和分析了soibjmosfet的优点:无闩锁效应、抗软失效能力强、寄生电容大大降低、热载流子效应减弱、减弱了短沟道效应、工艺简单等。
8.Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel , the quasi - two - dimensional analysis methods are used to deduced the drain current , threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6 . 0 simulation output . the degradations of device output conductance , subthreshold conduction and rf characteristics are also analyzed
针对mos器件热载流子退化所引入的界面态,根据其沿沟道非均匀分布的模型,采用准二维分析方法对退化后器件的漏源电流、阈值电压和饱和区沟道电场作了详细的理论推导,并与实验结果和器件二维数值模拟软件minimos6 . 0的计算结果进行了验证比较。
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